auf Bestellung 528 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 26.22 EUR |
| 10+ | 18.37 EUR |
| 50+ | 15.01 EUR |
| 100+ | 13.94 EUR |
| 500+ | 12.5 EUR |
| 800+ | 11 EUR |
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Technische Details NSF030120D7A0-QJ Nexperia
Description: NSF030120D7A0-Q/SOT8070/TO263-, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 69A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 18V, Power Dissipation (Max): 306W (Tc), Vgs(th) (Max) @ Id: 2.9V @ 4mA, Supplier Device Package: TO-236-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote NSF030120D7A0-QJ nach Preis ab 10.12 EUR bis 19.52 EUR
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| NSF030120D7A0-QJ | Hersteller : Nexperia USA Inc. |
 Description: NSF030120D7A0-Q/SOT8070/TO263-Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 69A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 18V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 4mA Supplier Device Package: TO-236-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 740 Stücke: Lieferzeit 10-14 Tag (e) |
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