| Anzahl | Preis |
|---|---|
| 1+ | 16.9 EUR |
| 10+ | 11.72 EUR |
| 100+ | 10.03 EUR |
| 500+ | 9.2 EUR |
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Technische Details NSF030120D7A0-QJ Nexperia
Description: NSF030120D7A0-Q/SOT8070/TO263-, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +22V, -10V, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Grade: Automotive, Supplier Device Package: TO-236-7, Vgs(th) (Max) @ Id: 2.9V @ 4mA, Power Dissipation (Max): 306W (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 18V, Current - Continuous Drain (Id) @ 25°C: 69A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tube.
Weitere Produktangebote NSF030120D7A0-QJ nach Preis ab 10.12 EUR bis 19.52 EUR
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| NSF030120D7A0-QJ | Hersteller : Nexperia USA Inc. |
 Description: NSF030120D7A0-Q/SOT8070/TO263-Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +22V, -10V Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Grade: Automotive Supplier Device Package: TO-236-7 Vgs(th) (Max) @ Id: 2.9V @ 4mA Power Dissipation (Max): 306W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 18V Current - Continuous Drain (Id) @ 25°C: 69A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tube |
auf Bestellung 740 Stücke: Lieferzeit 10-14 Tag (e) |
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