| Anzahl | Preis |
|---|---|
| 1+ | 21.07 EUR |
| 10+ | 18.96 EUR |
| 510+ | 12.81 EUR |
| 1020+ | 12.11 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NSF040120L4A0Q Nexperia
Description: SICFET N-CH 1200V 65A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 40A, 15V, Power Dissipation (Max): 306W (Tc), Vgs(th) (Max) @ Id: 2.9V @ 4mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V.
Weitere Produktangebote NSF040120L4A0Q nach Preis ab 23.64 EUR bis 32.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NSF040120L4A0Q | Hersteller : Nexperia USA Inc. |
 Description: SICFET N-CH 1200V 65A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 40A, 15V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 4mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V |
auf Bestellung 417 Stücke: Lieferzeit 10-14 Tag (e) |
|