NSM21156DW6T1G onsemi
Hersteller: onsemiDescription: TRANS NPN PREBIAS/PNP SOT363
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Power - Max: 230mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V, 65V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V / 220 @ 2mA, 5V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
auf Bestellung 65000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 11539+ | 0.049 EUR |
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Technische Details NSM21156DW6T1G onsemi
Description: TRANS NPN PREBIAS/PNP SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN Pre-Biased, 1 PNP, Power - Max: 230mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, 65V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V / 220 @ 2mA, 5V, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 10kOhms, Supplier Device Package: SC-88/SC70-6/SOT-363.
Weitere Produktangebote NSM21156DW6T1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| NSM21156DW6T1G |
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auf Bestellung 36000 Stücke: Lieferzeit 21-28 Tag (e) |
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| NSM21156DW6T1G | Hersteller : ONSEMI |
Description: ONSEMI - NSM21156DW6T1G - EACH tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 65000 Stücke: Lieferzeit 14-21 Tag (e) |
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NSM21156DW6T1G | Hersteller : onsemi |
Description: TRANS NPN PREBIAS/PNP SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN Pre-Biased, 1 PNP Power - Max: 230mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V, 65V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V / 220 @ 2mA, 5V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 |
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