Weitere Produktangebote NSM80101MT1G nach Preis ab 0.18 EUR bis 0.8 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NSM80101MT1G | onsemi |
Description: TRANS NPN 80V 0.5A SC74Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: NPN + Diode (Isolated) Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V Frequency - Transition: 150MHz Supplier Device Package: SC-74 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 400 mW |
auf Bestellung 516 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
NSM80101MT1G | onsemi |
Bipolar Transistors - BJT NPN TRANS & SWCH DIODE |
auf Bestellung 5342 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| NSM80101MT1G | ONSEMI |
Description: ONSEMI - NSM80101MT1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJTtariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 179500 Stücke: Lieferzeit 14-21 Tag (e) |
|
| NSM80101MT1G |
![]() |
Hersteller: onsemi
Description: TRANS NPN 80V 0.5A SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: NPN + Diode (Isolated)
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SC-74
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 400 mW
Description: TRANS NPN 80V 0.5A SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: NPN + Diode (Isolated)
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SC-74
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 400 mW
auf Bestellung 516 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 0.77 EUR |
| 40+ | 0.52 EUR |
| 100+ | 0.36 EUR |
| 500+ | 0.27 EUR |
| NSM80101MT1G |
![]() |
Hersteller: onsemi
Bipolar Transistors - BJT NPN TRANS & SWCH DIODE
Bipolar Transistors - BJT NPN TRANS & SWCH DIODE
auf Bestellung 5342 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.8 EUR |
| 10+ | 0.62 EUR |
| 100+ | 0.35 EUR |
| 1000+ | 0.25 EUR |
| 3000+ | 0.23 EUR |
| 9000+ | 0.19 EUR |
| 24000+ | 0.18 EUR |
| NSM80101MT1G |
![]() |
Hersteller: ONSEMI
Description: ONSEMI - NSM80101MT1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - NSM80101MT1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 179500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3571+ | 0.35 EUR |



