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NSS12501UW3T2G

NSS12501UW3T2G onsemi

nss12501uw3-d.pdf Hersteller: onsemi
Description: TRANS NPN 12V 5A 3WDFN
Packaging: Cut Tape (CT)
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-WDFN (2x2)
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 875 mW
auf Bestellung 1992 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.6 EUR
13+ 1.44 EUR
100+ 1.12 EUR
500+ 0.93 EUR
1000+ 0.73 EUR
Mindestbestellmenge: 11
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Technische Details NSS12501UW3T2G onsemi

Description: TRANS NPN 12V 5A 3WDFN, Packaging: Tape & Reel (TR), Package / Case: 3-WDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 120mV @ 400mA, 4A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V, Frequency - Transition: 150MHz, Supplier Device Package: 3-WDFN (2x2), Part Status: Active, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 12 V, Power - Max: 875 mW.

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NSS12501UW3T2G NSS12501UW3T2G Hersteller : onsemi NSS12501UW3_D-1813851.pdf Bipolar Transistors - BJT LO V NPN TRANSISTOR 12V 7.0A
auf Bestellung 2843 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
23+2.35 EUR
26+ 2.07 EUR
100+ 1.59 EUR
500+ 1.25 EUR
1000+ 1 EUR
3000+ 0.91 EUR
6000+ 0.89 EUR
Mindestbestellmenge: 23
NSS12501UW3T2G nss12501uw3-d.pdf
auf Bestellung 342 Stücke:
Lieferzeit 21-28 Tag (e)
NSS12501UW3T2G NSS12501UW3T2G Hersteller : ON Semiconductor nss12501uw3-d.pdf Trans GP BJT NPN 12V 5A 1500mW Automotive 3-Pin WDFN EP T/R
Produkt ist nicht verfügbar
NSS12501UW3T2G NSS12501UW3T2G Hersteller : onsemi nss12501uw3-d.pdf Description: TRANS NPN 12V 5A 3WDFN
Packaging: Tape & Reel (TR)
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-WDFN (2x2)
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 875 mW
Produkt ist nicht verfügbar