NSS12600CF8T1G onsemi
Hersteller: onsemi
Description: TRANS PNP 12V 5A CHIPFET
Power - Max: 830 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: ChipFET™
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 170mV @ 400mA, 4A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Bulk
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Technische Details NSS12600CF8T1G onsemi
Description: TRANS PNP 12V 5A CHIPFET, Power - Max: 830 mW, Voltage - Collector Emitter Breakdown (Max): 12 V, Current - Collector (Ic) (Max): 5 A, Supplier Device Package: ChipFET™, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1A, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 170mV @ 400mA, 4A, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote NSS12600CF8T1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NSS12600CF8T1G | onsemi |
Description: TRANS PNP 12V 5A CHIPFET Power - Max: 830 mW Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 5 A Supplier Device Package: ChipFET™ Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1A, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 170mV @ 400mA, 4A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NSS12600CF8T1G |
|
Hersteller: onsemi
Description: TRANS PNP 12V 5A CHIPFET
Power - Max: 830 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: ChipFET™
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 170mV @ 400mA, 4A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: TRANS PNP 12V 5A CHIPFET
Power - Max: 830 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: ChipFET™
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 170mV @ 400mA, 4A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH