NSS1C200MZ4T3G onsemi
Hersteller: onsemi
Description: TRANS PNP 100V 2A SOT223
Packaging: Bulk
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-223 (TO-261)
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
| Anzahl | Preis |
|---|---|
| 1596+ | 0.33 EUR |
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Technische Details NSS1C200MZ4T3G onsemi
Description: TRANS PNP 100V 2A SOT223, Packaging: Bulk, Power - Max: 800 mW, Voltage - Collector Emitter Breakdown (Max): 100 V, Current - Collector (Ic) (Max): 2 A, Part Status: Active, Supplier Device Package: SOT-223 (TO-261), Frequency - Transition: 120MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 2A, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA.
Weitere Produktangebote NSS1C200MZ4T3G nach Preis ab 0.3 EUR bis 1 EUR
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NSS1C200MZ4T3G | onsemi |
Bipolar Transistors - BJT PNP BIP POWER TRAN SOT223 |
auf Bestellung 4280 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSS1C200MZ4T3G |
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Hersteller: onsemi
Bipolar Transistors - BJT PNP BIP POWER TRAN SOT223
Bipolar Transistors - BJT PNP BIP POWER TRAN SOT223
auf Bestellung 4280 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 1 EUR |
| 10+ | 0.87 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.34 EUR |
| 8000+ | 0.3 EUR |