NSS20200DMTTBG onsemi
Hersteller: onsemiDescription: TRANS PNP 20V 2A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: 6-WDFN (2x2)
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.39 EUR |
| 6000+ | 0.37 EUR |
| 9000+ | 0.34 EUR |
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Technische Details NSS20200DMTTBG onsemi
Description: TRANS PNP 20V 2A 6WDFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V, Frequency - Transition: 155MHz, Supplier Device Package: 6-WDFN (2x2).
Weitere Produktangebote NSS20200DMTTBG nach Preis ab 0.44 EUR bis 1.04 EUR
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NSS20200DMTTBG | Hersteller : onsemi |
Description: TRANS PNP 20V 2A 6WDFN Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V Frequency - Transition: 155MHz Supplier Device Package: 6-WDFN (2x2) |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSS20200DMTTBG | Hersteller : onsemi |
Bipolar Transistors - BJT 20V DUAL LOW VCE(SA T) FOR |
Produkt ist nicht verfügbar |