NSS20300MR6T1G onsemi
Hersteller: onsemi
Description: TRANS PNP 20V 3A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 20mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSOP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 545 mW
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Technische Details NSS20300MR6T1G onsemi
Description: TRANS PNP 20V 3A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 320mV @ 20mA, 2A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 2V, Frequency - Transition: 100MHz, Supplier Device Package: 6-TSOP, Part Status: Active, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 545 mW.
Weitere Produktangebote NSS20300MR6T1G nach Preis ab 0.27 EUR bis 1.2 EUR
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NSS20300MR6T1G | onsemi |
Description: TRANS PNP 20V 3A 6TSOP Power - Max: 545 mW Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 3 A Part Status: Active Supplier Device Package: 6-TSOP Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 2V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 320mV @ 20mA, 2A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSS20300MR6T1G | onsemi |
Bipolar Transistors - BJT 3A 20V Low VCEsat |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSS20300MR6T1G | ON Semiconductor |
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auf Bestellung 25 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NSS20300MR6T1G |
|
Hersteller: onsemi
Description: TRANS PNP 20V 3A 6TSOP
Power - Max: 545 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: 6-TSOP
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 320mV @ 20mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: TRANS PNP 20V 3A 6TSOP
Power - Max: 545 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: 6-TSOP
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 320mV @ 20mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 0.9 EUR |
| 23+ | 0.78 EUR |
| 100+ | 0.58 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.35 EUR |
| NSS20300MR6T1G |
|
Hersteller: onsemi
Bipolar Transistors - BJT 3A 20V Low VCEsat
Bipolar Transistors - BJT 3A 20V Low VCEsat
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.2 EUR |
| 10+ | 0.83 EUR |
| 100+ | 0.55 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.37 EUR |
| 3000+ | 0.27 EUR |
| NSS20300MR6T1G |
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Hersteller: ON Semiconductor
auf Bestellung 25 Stücke:
Lieferzeit 21-28 Tag (e)