NSS20501UW3TBG onsemi
Hersteller: onsemi
Description: TRANS NPN 20V 5A 3WDFN
Packaging: Cut Tape (CT)
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 125mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-WDFN (2x2)
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 875 mW
| Anzahl | Preis |
|---|---|
| 19+ | 0.97 EUR |
| 22+ | 0.83 EUR |
| 100+ | 0.57 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.36 EUR |
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Technische Details NSS20501UW3TBG onsemi
Description: TRANS NPN 20V 5A 3WDFN, Packaging: Tape & Reel (TR), Package / Case: 3-WDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 125mV @ 400mA, 4A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V, Frequency - Transition: 150MHz, Supplier Device Package: 3-WDFN (2x2), Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 875 mW.
Weitere Produktangebote NSS20501UW3TBG nach Preis ab 0.3 EUR bis 0.98 EUR
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| NSS20501UW3TBG | onsemi |
Bipolar Transistors - BJT 20V NPN LOW VCE(SAT) XTR |
auf Bestellung 940 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSS20501UW3TBG |
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Hersteller: onsemi
Bipolar Transistors - BJT 20V NPN LOW VCE(SAT) XTR
Bipolar Transistors - BJT 20V NPN LOW VCE(SAT) XTR
auf Bestellung 940 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 0.98 EUR |
| 10+ | 0.84 EUR |
| 100+ | 0.63 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.38 EUR |
| 3000+ | 0.32 EUR |
| 9000+ | 0.3 EUR |