NST30010MXV6T1G onsemi
Hersteller: onsemiDescription: TRANS 2PNP 30V 0.1A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-563
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4000+ | 0.46 EUR |
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Technische Details NST30010MXV6T1G onsemi
Description: TRANS 2PNP 30V 0.1A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual) Matched Pair, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 500mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 30V, Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: SOT-563.
Weitere Produktangebote NST30010MXV6T1G nach Preis ab 0.26 EUR bis 1.21 EUR
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NST30010MXV6T1G | Hersteller : ON Semiconductor |
Trans GP BJT PNP 30V 0.1A 661mW 6-Pin SOT-563 T/R |
auf Bestellung 3750 Stücke: Lieferzeit 14-21 Tag (e) |
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NST30010MXV6T1G | Hersteller : ON Semiconductor |
Trans GP BJT PNP 30V 0.1A 661mW 6-Pin SOT-563 T/R |
auf Bestellung 3750 Stücke: Lieferzeit 14-21 Tag (e) |
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NST30010MXV6T1G | Hersteller : onsemi |
Bipolar Transistors - BJT DUAL MATCHED GP XTT PNP |
auf Bestellung 26461 Stücke: Lieferzeit 10-14 Tag (e) |
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NST30010MXV6T1G | Hersteller : onsemi |
Description: TRANS 2PNP 30V 0.1A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Matched Pair Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-563 |
auf Bestellung 5056 Stücke: Lieferzeit 10-14 Tag (e) |
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NST30010MXV6T1G | Hersteller : ON Semiconductor |
Trans GP BJT PNP 30V 0.1A 661mW 6-Pin SOT-563 T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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NST30010MXV6T1G | Hersteller : ON Semiconductor |
Trans GP BJT PNP 30V 0.1A 661mW 6-Pin SOT-563 T/R |
Produkt ist nicht verfügbar |
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NST30010MXV6T1G | Hersteller : ON Semiconductor |
Trans GP BJT PNP 30V 0.1A 661mW 6-Pin SOT-563 T/R |
Produkt ist nicht verfügbar |
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| NST30010MXV6T1G | Hersteller : ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.429W; SOT563 Application: automotive industry Mounting: SMD Type of transistor: PNP x2 Current gain: 420...800 Kind of package: reel; tape Case: SOT563 Frequency: 100MHz Collector current: 0.1A Collector-emitter voltage: 30V Power dissipation: 0.429W Polarisation: bipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NST30010MXV6T1G | Hersteller : ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.429W; SOT563 Application: automotive industry Mounting: SMD Type of transistor: PNP x2 Current gain: 420...800 Kind of package: reel; tape Case: SOT563 Frequency: 100MHz Collector current: 0.1A Collector-emitter voltage: 30V Power dissipation: 0.429W Polarisation: bipolar |
Produkt ist nicht verfügbar |