NST857BMX2T5G onsemi
Hersteller: onsemi
Description: TRANS PNP 45V 0.1A 3X2DFN
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: 3-X2DFN (1x0.6)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
| Anzahl | Preis |
|---|---|
| 8000+ | 0.076 EUR |
| 16000+ | 0.069 EUR |
| 24000+ | 0.066 EUR |
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Technische Details NST857BMX2T5G onsemi
Description: TRANS PNP 45V 0.1A 3X2DFN, Packaging: Tape & Reel (TR), Package / Case: 0402 (1006 Metric), Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: 3-X2DFN (1x0.6), Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 225 mW.
Weitere Produktangebote NST857BMX2T5G nach Preis ab 0.07 EUR bis 0.53 EUR
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NST857BMX2T5G | onsemi |
Description: TRANS PNP 45V 0.1A 3X2DFN Package / Case: 0402 (1006 Metric) Packaging: Cut Tape (CT) Power - Max: 225 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: 3-X2DFN (1x0.6) Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount |
auf Bestellung 167790 Stücke: Lieferzeit 10-14 Tag (e) |
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| NST857BMX2T5G | onsemi |
Bipolar Transistors - BJT 100 mA, 45 V, PNP Bipolar Transistor in SOT-883 100 mA, 45 V |
auf Bestellung 5878 Stücke: Lieferzeit 10-14 Tag (e) |
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| NST857BMX2T5G |
|
Hersteller: onsemi
Description: TRANS PNP 45V 0.1A 3X2DFN
Package / Case: 0402 (1006 Metric)
Packaging: Cut Tape (CT)
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: 3-X2DFN (1x0.6)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Description: TRANS PNP 45V 0.1A 3X2DFN
Package / Case: 0402 (1006 Metric)
Packaging: Cut Tape (CT)
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: 3-X2DFN (1x0.6)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
auf Bestellung 167790 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 34+ | 0.53 EUR |
| 55+ | 0.32 EUR |
| 100+ | 0.2 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.13 EUR |
| 2000+ | 0.12 EUR |
| NST857BMX2T5G |
|
Hersteller: onsemi
Bipolar Transistors - BJT 100 mA, 45 V, PNP Bipolar Transistor in SOT-883 100 mA, 45 V
Bipolar Transistors - BJT 100 mA, 45 V, PNP Bipolar Transistor in SOT-883 100 mA, 45 V
auf Bestellung 5878 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.51 EUR |
| 10+ | 0.31 EUR |
| 100+ | 0.2 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.11 EUR |
| 5000+ | 0.07 EUR |