NSV12100XV6T1G onsemi
Hersteller: onsemi
Description: TRANS PNP 12V 1A SOT563
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 440mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-563
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
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Technische Details NSV12100XV6T1G onsemi
Description: TRANS PNP 12V 1A SOT563, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 440mV @ 100mA, 1A, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR), Power - Max: 650 mW, Voltage - Collector Emitter Breakdown (Max): 12 V, Current - Collector (Ic) (Max): 1 A, Supplier Device Package: SOT-563, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V.
Weitere Produktangebote NSV12100XV6T1G nach Preis ab 0.24 EUR bis 1.3 EUR
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NSV12100XV6T1G | onsemi |
Description: TRANS PNP 12V 1A SOT563 Power - Max: 650 mW Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: SOT-563 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 440mV @ 100mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSV12100XV6T1G | onsemi |
Bipolar Transistors - BJT 12V PNP LOW VCE(SAT) XTR |
auf Bestellung 3999 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NSV12100XV6T1G |
|
Hersteller: onsemi
Description: TRANS PNP 12V 1A SOT563
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-563
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 440mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: TRANS PNP 12V 1A SOT563
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-563
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 440mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 14+ | 1.3 EUR |
| 22+ | 0.81 EUR |
| 100+ | 0.52 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.36 EUR |
| 2000+ | 0.33 EUR |
| NSV12100XV6T1G |
|
Hersteller: onsemi
Bipolar Transistors - BJT 12V PNP LOW VCE(SAT) XTR
Bipolar Transistors - BJT 12V PNP LOW VCE(SAT) XTR
auf Bestellung 3999 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 0.97 EUR |
| 10+ | 0.65 EUR |
| 100+ | 0.44 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.29 EUR |
| 4000+ | 0.27 EUR |
| 8000+ | 0.24 EUR |