NSV40302PDR2G onsemi
Hersteller: onsemi
Description: TRANS NPN/PNP 40V 3A 8SOIC
Supplier Device Package: 8-SOIC
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 3A
Power - Max: 653mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 13+ | 1.36 EUR |
| 16+ | 1.17 EUR |
| 100+ | 0.81 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.58 EUR |
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Technische Details NSV40302PDR2G onsemi
Description: TRANS NPN/PNP 40V 3A 8SOIC, Packaging: Tape & Reel (TR), Supplier Device Package: 8-SOIC, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A, Voltage - Collector Emitter Breakdown (Max): 40V, Current - Collector (Ic) (Max): 3A, Power - Max: 653mW, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: 1 NPN, 1 PNP, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width).
Weitere Produktangebote NSV40302PDR2G nach Preis ab 0.51 EUR bis 1.9 EUR
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NSV40302PDR2G | onsemi |
Bipolar Transistors - BJT COMP 40V NPN/PNP LO |
auf Bestellung 30221 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSV40302PDR2G |
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Hersteller: onsemi
Bipolar Transistors - BJT COMP 40V NPN/PNP LO
Bipolar Transistors - BJT COMP 40V NPN/PNP LO
auf Bestellung 30221 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.9 EUR |
| 10+ | 1.2 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.56 EUR |
| 2500+ | 0.51 EUR |