NSV60101DMTWTBG onsemi
Hersteller: onsemi
Description: TRANS NPN DUAL 60V 1A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.27W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: 6-WDFN (2x2)
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Technische Details NSV60101DMTWTBG onsemi
Description: TRANS NPN DUAL 60V 1A 6WDFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 2.27W, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V, Frequency - Transition: 180MHz, Supplier Device Package: 6-WDFN (2x2).
Weitere Produktangebote NSV60101DMTWTBG nach Preis ab 0.15 EUR bis 2.01 EUR
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NSV60101DMTWTBG | onsemi |
Description: TRANS NPN DUAL 60V 1A 6WDFN Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2.27W Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 180MHz Supplier Device Package: 6-WDFN (2x2) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV60101DMTWTBG | onsemi |
Bipolar Transistors - BJT DUAL 60V 1A LOWVCESA |
auf Bestellung 164 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSV60101DMTWTBG | ON Semiconductor |
Trans GP BJT NPN 60V 1A 2270mW Automotive 6-Pin WDFN EP T/R |
auf Bestellung 980 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSV60101DMTWTBG |
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Hersteller: onsemi
Description: TRANS NPN DUAL 60V 1A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.27W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: 6-WDFN (2x2)
Description: TRANS NPN DUAL 60V 1A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.27W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: 6-WDFN (2x2)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 1.18 EUR |
| 21+ | 1.01 EUR |
| 100+ | 0.7 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.5 EUR |
| NSV60101DMTWTBG |
|
Hersteller: onsemi
Bipolar Transistors - BJT DUAL 60V 1A LOWVCESA
Bipolar Transistors - BJT DUAL 60V 1A LOWVCESA
auf Bestellung 164 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.01 EUR |
| 10+ | 1.24 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.6 EUR |
| 1000+ | 0.55 EUR |
| 3000+ | 0.44 EUR |
| NSV60101DMTWTBG |
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Hersteller: ON Semiconductor
Trans GP BJT NPN 60V 1A 2270mW Automotive 6-Pin WDFN EP T/R
Trans GP BJT NPN 60V 1A 2270mW Automotive 6-Pin WDFN EP T/R
auf Bestellung 980 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 517+ | 0.33 EUR |
| 947+ | 0.18 EUR |
| 961+ | 0.17 EUR |
| 977+ | 0.15 EUR |