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NSV60200SMTWTBG onsemi


nss60200smt-d.pdf
Hersteller: onsemi
Description: TRANS PNP 60V 2A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: 6-WDFN (2x2)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.8 W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.4 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NSV60200SMTWTBG onsemi

Description: TRANS PNP 60V 2A 6WDFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V, Frequency - Transition: 155MHz, Supplier Device Package: 6-WDFN (2x2), Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1.8 W.

Weitere Produktangebote NSV60200SMTWTBG nach Preis ab 0.36 EUR bis 1.19 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
NSV60200SMTWTBG NSV60200SMTWTBG onsemi NSS60200SMT_D-2318437.pdf Bipolar Transistors - BJT 60V SINGLE 2A LOWVC E(SAT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.15 EUR
10+0.99 EUR
100+0.74 EUR
500+0.58 EUR
1000+0.45 EUR
3000+0.4 EUR
9000+0.36 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSV60200SMTWTBG NSV60200SMTWTBG onsemi nss60200smt-d.pdf Description: TRANS PNP 60V 2A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: 6-WDFN (2x2)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.8 W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.19 EUR
21+1.01 EUR
100+0.7 EUR
500+0.55 EUR
1000+0.44 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSV60200SMTWTBG NSS60200SMT_D-2318437.pdf
Hersteller: onsemi
Bipolar Transistors - BJT 60V SINGLE 2A LOWVC E(SAT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+1.15 EUR
10+0.99 EUR
100+0.74 EUR
500+0.58 EUR
1000+0.45 EUR
3000+0.4 EUR
9000+0.36 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSV60200SMTWTBG nss60200smt-d.pdf
Hersteller: onsemi
Description: TRANS PNP 60V 2A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: 6-WDFN (2x2)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.8 W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
18+1.19 EUR
21+1.01 EUR
100+0.7 EUR
500+0.55 EUR
1000+0.44 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH