| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.98 EUR |
| 10+ | 0.6 EUR |
| 100+ | 0.38 EUR |
| 500+ | 0.29 EUR |
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Technische Details NSVBA124EMXWTBG onsemi
Description: BIAS RESISTOR TRANSISTORS (BRT), Packaging: Bulk, Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Wettable Flank, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V, Supplier Device Package: 3-XDFNW (1x1), Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 450 mW, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 22 kOhms, Qualification: AEC-Q101, Resistors Included: R1 and R2.
Weitere Produktangebote NSVBA124EMXWTBG nach Preis ab 0.15 EUR bis 0.99 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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NSVBA124EMXWTBG | onsemi |
 Description: BIAS RESISTOR TRANSISTORS (BRT)Packaging: Bulk Package / Case: 3-XFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Supplier Device Package: 3-XDFNW (1x1) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 450 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
auf Bestellung 186000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NSVBA124EMXWTBG |
|
Hersteller: onsemi
Description: BIAS RESISTOR TRANSISTORS (BRT)
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: 3-XDFNW (1x1)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 450 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: BIAS RESISTOR TRANSISTORS (BRT)
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: 3-XDFNW (1x1)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 450 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 186000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 0.99 EUR |
| 35+ | 0.61 EUR |
| 100+ | 0.38 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.26 EUR |
| 2000+ | 0.24 EUR |
| 5000+ | 0.2 EUR |
| 10000+ | 0.19 EUR |
| 50000+ | 0.15 EUR |