NSVBA143EMXWTBG onsemi
Hersteller: onsemi
Description: BIAS RESISTOR TRANSISTORS (BRT)
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Supplier Device Package: 3-XDFNW (1x1)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 450 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
| Anzahl | Preis |
|---|---|
| 22+ | 0.81 EUR |
| 36+ | 0.5 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.21 EUR |
| 2000+ | 0.19 EUR |
| 5000+ | 0.17 EUR |
| 10000+ | 0.15 EUR |
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Technische Details NSVBA143EMXWTBG onsemi
Description: BIAS RESISTOR TRANSISTORS (BRT), Packaging: Bulk, Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Wettable Flank, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V, Supplier Device Package: 3-XDFNW (1x1), Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 450 mW, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, Qualification: AEC-Q101, Resistors Included: R1 and R2.
Weitere Produktangebote NSVBA143EMXWTBG nach Preis ab 0.15 EUR bis 0.82 EUR
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NSVBA143EMXWTBG | Hersteller : onsemi |
Digital Transistors PBRT, 50V, XDFNW3 |
auf Bestellung 2700 Stücke: Lieferzeit 10-14 Tag (e) |
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