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NSVBC143XMXWTBG

NSVBC143XMXWTBG onsemi

NSBCMXW-D.PDF Hersteller: onsemi
Description: BIAS RESISTOR TRANSISTORS (BRT)
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: 3-XDFNW (1x1)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 450 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 96000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.18 EUR
6000+0.16 EUR
9000+0.15 EUR
21000+0.14 EUR
30000+0.13 EUR
75000+0.12 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NSVBC143XMXWTBG onsemi

Description: BIAS RESISTOR TRANSISTORS (BRT), Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Wettable Flank, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V, Supplier Device Package: 3-XDFNW (1x1), Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 450 mW, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 10 kOhms, Qualification: AEC-Q101, Resistors Included: R1 and R2.

Weitere Produktangebote NSVBC143XMXWTBG nach Preis ab 0.18 EUR bis 0.81 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NSVBC143XMXWTBG NSVBC143XMXWTBG Hersteller : onsemi NSBCMXW-D.PDF Digital Transistors NBRT, 50V, XDFNW3
auf Bestellung 2700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.8 EUR
10+0.49 EUR
100+0.32 EUR
500+0.24 EUR
1000+0.22 EUR
3000+0.18 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
NSVBC143XMXWTBG NSVBC143XMXWTBG Hersteller : onsemi NSBCMXW-D.PDF Description: BIAS RESISTOR TRANSISTORS (BRT)
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: 3-XDFNW (1x1)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 450 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 96000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
36+0.49 EUR
100+0.31 EUR
500+0.24 EUR
1000+0.21 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH