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NSVDTA123JM3T5G

NSVDTA123JM3T5G onsemi

DTA123J-D.PDF Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Bulk
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-723
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 136000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7672+0.065 EUR
Mindestbestellmenge: 7672
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NSVDTA123JM3T5G onsemi

Description: TRANS PREBIAS PNP 50V SOT723, Packaging: Bulk, Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Supplier Device Package: SOT-723, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 260 mW, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms, Qualification: AEC-Q101.

Weitere Produktangebote NSVDTA123JM3T5G nach Preis ab 0.066 EUR bis 0.58 EUR

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NSVDTA123JM3T5G NSVDTA123JM3T5G Hersteller : onsemi DTA123J-D.PDF Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-723
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 56000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.091 EUR
16000+0.075 EUR
24000+0.074 EUR
56000+0.066 EUR
Mindestbestellmenge: 8000
Im Einkaufswagen  Stück im Wert von  UAH
NSVDTA123JM3T5G NSVDTA123JM3T5G Hersteller : onsemi DTA123J-D.PDF Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-723
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 56000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
45+0.4 EUR
100+0.2 EUR
500+0.16 EUR
1000+0.11 EUR
2000+0.098 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
NSVDTA123JM3T5G NSVDTA123JM3T5G Hersteller : onsemi DTA123J_D-2310944.pdf Digital Transistors SS SOT723BR XSTR PNP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH