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NSVMUN5212DW1T1G

NSVMUN5212DW1T1G onsemi

dtc124ed-d.pdf
Hersteller: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-363
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Supplier Device Package: SC-88/SC70-6/SOT-363
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.084 EUR
6000+0.075 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NSVMUN5212DW1T1G onsemi

Description: TRANS PREBIAS 2NPN 50V SOT-363, Resistor - Emitter Base (R2): 22kOhms, Resistor - Base (R1): 22kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 250mW, Transistor Type: 2 NPN - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR), Supplier Device Package: SC-88/SC70-6/SOT-363, Qualification: AEC-Q101, Grade: Automotive.

Weitere Produktangebote NSVMUN5212DW1T1G nach Preis ab 0.11 EUR bis 0.62 EUR

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NSVMUN5212DW1T1G NSVMUN5212DW1T1G onsemi dtc124ed-d.pdf Description: TRANS PREBIAS 2NPN 50V SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 8395 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.44 EUR
67+0.26 EUR
107+0.16 EUR
500+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5212DW1T1G onsemi DTC124ED_D-2310718.pdf Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V
auf Bestellung 86 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.62 EUR
10+0.45 EUR
100+0.27 EUR
1000+0.17 EUR
3000+0.16 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5212DW1T1G dtc124ed-d.pdf
NSVMUN5212DW1T1G
Hersteller: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 8395 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
67+0.26 EUR
107+0.16 EUR
500+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5212DW1T1G DTC124ED_D-2310718.pdf
Hersteller: onsemi
Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V
auf Bestellung 86 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.62 EUR
10+0.45 EUR
100+0.27 EUR
1000+0.17 EUR
3000+0.16 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH