NT9000HDAE4S-ES Nisshinbo Micro Devices Inc.
Hersteller: Nisshinbo Micro Devices Inc.
Description: DIODE FOR 1W CLASS RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Diode Type: Anti-Parallel
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.2pF @ 2V, 100MHz
Voltage - Peak Reverse (Max): 20V
Supplier Device Package: DFN1212-4-HD
Current - Max: 300 mA
Power Dissipation (Max): 920 mW
| Anzahl | Preis |
|---|---|
| 2+ | 10.42 EUR |
| 10+ | 8.03 EUR |
| 25+ | 7.43 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NT9000HDAE4S-ES Nisshinbo Micro Devices Inc.
Description: DIODE FOR 1W CLASS RECTIFIER, Packaging: Tape & Reel (TR), Package / Case: 4-XFDFN Exposed Pad, Diode Type: Anti-Parallel, Operating Temperature: 150°C (TJ), Capacitance @ Vr, F: 0.2pF @ 2V, 100MHz, Voltage - Peak Reverse (Max): 20V, Supplier Device Package: DFN1212-4-HD, Current - Max: 300 mA, Power Dissipation (Max): 920 mW.
Weitere Produktangebote NT9000HDAE4S-ES
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| NT9000HDAE4S-ES | Hersteller : Nisshinbo Micro Devices Inc. |
Description: DIODE FOR 1W CLASS RECTIFIER Packaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Diode Type: Anti-Parallel Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.2pF @ 2V, 100MHz Voltage - Peak Reverse (Max): 20V Supplier Device Package: DFN1212-4-HD Current - Max: 300 mA Power Dissipation (Max): 920 mW |
Produkt ist nicht verfügbar |
||
 |
NT9000HDAE4S-ES | Hersteller : Nisshinbo |
 Rectifiers Engineering Sample - Diode for 1W Class Rectifier |
Produkt ist nicht verfügbar |