NTA4151PT1G onsemi
Hersteller: onsemi
Description: MOSFET P-CH 20V 760MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 760mA (Tj)
Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V
Power Dissipation (Max): 301mW (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 5 V
Description: MOSFET P-CH 20V 760MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 760mA (Tj)
Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V
Power Dissipation (Max): 301mW (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 5 V
auf Bestellung 174000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.12 EUR |
75000+ | 0.1 EUR |
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Technische Details NTA4151PT1G onsemi
Description: MOSFET P-CH 20V 760MA SC75, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 760mA (Tj), Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V, Power Dissipation (Max): 301mW (Tj), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SC-75, SOT-416, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 5 V.
Weitere Produktangebote NTA4151PT1G nach Preis ab 0.18 EUR bis 1.14 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
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NTA4151PT1G | Hersteller : onsemi |
Description: MOSFET P-CH 20V 760MA SC75 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 760mA (Tj) Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V Power Dissipation (Max): 301mW (Tj) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SC-75, SOT-416 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 5 V |
auf Bestellung 178380 Stücke: Lieferzeit 10-14 Tag (e) |
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NTA4151PT1G | Hersteller : onsemi | MOSFET -20V -760mA PChannel |
auf Bestellung 79098 Stücke: Lieferzeit 14-28 Tag (e) |
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NTA4151PT1G | Hersteller : ONSEMI |
Description: ONSEMI - NTA4151PT1G - Leistungs-MOSFET, p-Kanal, 20 V, 760 mA, 0.26 ohm, SC-75, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20 Dauer-Drainstrom Id: 760 Rds(on)-Messspannung Vgs: 4.5 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 301 Bauform - Transistor: SC-75 Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: p-Kanal Betriebswiderstand, Rds(on): 0.26 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 450 SVHC: No SVHC (17-Jan-2022) |
auf Bestellung 66702 Stücke: Lieferzeit 14-21 Tag (e) |
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NTA4151PT1G | Hersteller : ON Semiconductor | Trans MOSFET P-CH 20V 0.76A 3-Pin SOT-416 T/R |
auf Bestellung 132000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTA4151PT1G | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 0.301W; SC75 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.76A Power dissipation: 0.301W Case: SC75 Gate-source voltage: ±6V On-state resistance: 0.36Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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NTA4151PT1G | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 0.301W; SC75 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.76A Power dissipation: 0.301W Case: SC75 Gate-source voltage: ±6V On-state resistance: 0.36Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |