auf Bestellung 800 Stücke:
Lieferzeit 143-157 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 15.29 EUR |
| 10+ | 13.1 EUR |
| 100+ | 10.92 EUR |
| 800+ | 8.66 EUR |
| 2400+ | 8.29 EUR |
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Technische Details NTB095N65S3HF onsemi
Description: MOSFET N-CH 650V 36A D2PAK-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V, Power Dissipation (Max): 272W (Tc), Vgs(th) (Max) @ Id: 5V @ 860µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V.
Weitere Produktangebote NTB095N65S3HF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NTB095N65S3HF | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 650V 36A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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NTB095N65S3HF | Hersteller : onsemi |
Description: MOSFET N-CH 650V 36A D2PAK-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 5V @ 860µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V |
Produkt ist nicht verfügbar |
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NTB095N65S3HF | Hersteller : onsemi |
Description: MOSFET N-CH 650V 36A D2PAK-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 5V @ 860µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V |
Produkt ist nicht verfügbar |