Technische Details NTB25P06 ON
Description: MOSFET P-CH 60V 27.5A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 120W (Tj), Rds On (Max) @ Id, Vgs: 82mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 27.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
Weitere Produktangebote NTB25P06
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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NTB25P06 | onsemi |
 Description: MOSFET P-CH 60V 27.5A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 120W (Tj) Rds On (Max) @ Id, Vgs: 82mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 27.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
NTB25P06 | onsemi |
MOSFET -60V -27.5A Pchannel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTB25P06 |
|
Hersteller: onsemi
Description: MOSFET P-CH 60V 27.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 120W (Tj)
Rds On (Max) @ Id, Vgs: 82mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 27.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: MOSFET P-CH 60V 27.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 120W (Tj)
Rds On (Max) @ Id, Vgs: 82mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 27.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTB25P06 |
|
Hersteller: onsemi
MOSFET -60V -27.5A Pchannel
MOSFET -60V -27.5A Pchannel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH