NTB75N03RT4G onsemi
Hersteller: onsemiDescription: MOSFET N-CH 25V 9.7A/75A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 1.25W (Ta), 74.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D²PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1333 pF @ 20 V
auf Bestellung 4166 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 592+ | 1.26 EUR |
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Technische Details NTB75N03RT4G onsemi
Description: MOSFET N-CH 25V 9.7A/75A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 75A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V, Power Dissipation (Max): 1.25W (Ta), 74.4W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: D²PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1333 pF @ 20 V.
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Verfügbarkeit |
Preis ohne MwSt |
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| NTB75N03RT4G | Hersteller : ON |
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auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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| NTB75N03RT4G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 25V 12.6A 3-Pin(2+Tab) D2PAK T/R |
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NTB75N03RT4G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 25V 12.6A 3-Pin(2+Tab) D2PAK T/R |
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NTB75N03RT4G | Hersteller : onsemi |
Description: MOSFET N-CH 25V 9.7A/75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 1.25W (Ta), 74.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D²PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1333 pF @ 20 V |
Produkt ist nicht verfügbar |