NTCR013N120M3S onsemi
Hersteller: onsemiDescription: WAFER DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 20mOhm @ 75A, 18V
Vgs(th) (Max) @ Id: 4.4V @ 37mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5813 pF @ 800 V
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Technische Details NTCR013N120M3S onsemi
Description: WAFER DIE, Packaging: Tray, Package / Case: Die, Mounting Type: Surface Mount, Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Rds On (Max) @ Id, Vgs: 20mOhm @ 75A, 18V, Vgs(th) (Max) @ Id: 4.4V @ 37mA, Supplier Device Package: Die, Drive Voltage (Max Rds On, Min Rds On): 18V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 5813 pF @ 800 V.
Weitere Produktangebote NTCR013N120M3S
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| NTCR013N120M3S | Hersteller : onsemi |
SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 13 mohm, 1200 V, M3S, Die Silicon Carbide (SiC) MOSFET ? EliteSiC, 13 mohm, 1200 V, M3S, Die |
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