NTD20N03L27-1G ON Semiconductor
| Anzahl | Preis |
|---|---|
| 902+ | 0.6 EUR |
| 1000+ | 0.55 EUR |
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Technische Details NTD20N03L27-1G ON Semiconductor
Description: MOSFET N-CH 30V 20A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 5V, Power Dissipation (Max): 1.75W (Ta), 74W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: IPAK, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 25 V.
Weitere Produktangebote NTD20N03L27-1G nach Preis ab 0.48 EUR bis 0.7 EUR
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NTD20N03L27-1G | ON Semiconductor |
 Trans MOSFET N-CH 30V 20A 3-Pin(3+Tab) IPAK Tube |
auf Bestellung 2448 Stücke: Lieferzeit 14-21 Tag (e) |
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NTD20N03L27-1G | ON Semiconductor |
Trans MOSFET N-CH 30V 20A 3-Pin(3+Tab) IPAK Tube |
auf Bestellung 12572 Stücke: Lieferzeit 14-21 Tag (e) |
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NTD20N03L27-1G | onsemi |
Description: MOSFET N-CH 30V 20A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 5V Power Dissipation (Max): 1.75W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 25 V |
auf Bestellung 17645 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTD20N03L27-1G | ON |
09+ |
auf Bestellung 3018 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTD20N03L27-1G |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 20A 3-Pin(3+Tab) IPAK Tube
Trans MOSFET N-CH 30V 20A 3-Pin(3+Tab) IPAK Tube
auf Bestellung 2448 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 902+ | 0.6 EUR |
| 1000+ | 0.55 EUR |
| NTD20N03L27-1G |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 20A 3-Pin(3+Tab) IPAK Tube
Trans MOSFET N-CH 30V 20A 3-Pin(3+Tab) IPAK Tube
auf Bestellung 12572 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 902+ | 0.6 EUR |
| 1000+ | 0.55 EUR |
| 10000+ | 0.48 EUR |
| NTD20N03L27-1G |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 20A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 5V
Power Dissipation (Max): 1.75W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 25 V
Description: MOSFET N-CH 30V 20A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 5V
Power Dissipation (Max): 1.75W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 25 V
auf Bestellung 17645 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 649+ | 0.7 EUR |
| NTD20N03L27-1G |
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Hersteller: ON
09+
09+
auf Bestellung 3018 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH