NTD20N06LT4G ONSEMI
Hersteller: ONSEMICategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 522 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 53+ | 1.36 EUR |
| 65+ | 1.12 EUR |
| 85+ | 0.84 EUR |
| 91+ | 0.79 EUR |
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Technische Details NTD20N06LT4G ONSEMI
Description: MOSFET N-CH 60V 20A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 48mOhm @ 10A, 5V, Power Dissipation (Max): 1.36W (Ta), 60W (Tj), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: DPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 25 V.
Weitere Produktangebote NTD20N06LT4G nach Preis ab 0.79 EUR bis 3.25 EUR
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NTD20N06LT4G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 60W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Power dissipation: 60W Case: DPAK Gate-source voltage: ±15V On-state resistance: 39mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 522 Stücke: Lieferzeit 14-21 Tag (e) |
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NTD20N06LT4G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTD20N06LT4G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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NTD20N06LT4G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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NTD20N06LT4G | Hersteller : onsemi |
Description: MOSFET N-CH 60V 20A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 10A, 5V Power Dissipation (Max): 1.36W (Ta), 60W (Tj) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 25 V |
auf Bestellung 1597 Stücke: Lieferzeit 21-28 Tag (e) |
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NTD20N06LT4G | Hersteller : onsemi |
MOSFET 60V 20A N-Channel |
auf Bestellung 5567 Stücke: Lieferzeit 378-392 Tag (e) |
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| NTD20N06LT4G | Hersteller : ON-Semicoductor |
N-MOSFET 20A 60V 60W 0.048Ω NTD20N06LT4G, NTD20N06T4G NTD20N06L smd ONS TNTD20n06l Anzahl je Verpackung: 10 Stücke |
auf Bestellung 2480 Stücke: Lieferzeit 7-14 Tag (e) |
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NTD20N06LT4G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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NTD20N06LT4G | Hersteller : onsemi |
Description: MOSFET N-CH 60V 20A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 10A, 5V Power Dissipation (Max): 1.36W (Ta), 60W (Tj) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 25 V |
Produkt ist nicht verfügbar |