NTD32N06L-001 onsemi

Description: MOSFET N-CH 60V 32A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, Supplier Device Package: IPAK, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj), Rds On (Max) @ Id, Vgs: 28mOhm @ 16A, 5V, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Bulk.