NTD3813N-35G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 16V 9.6A/51A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 8.75mOhm @ 15A, 10V
Power Dissipation (Max): 1.2W (Ta), 34.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 16 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 963 pF @ 12 V
| Anzahl | Preis |
|---|---|
| 1402+ | 0.34 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTD3813N-35G onsemi
Description: MOSFET N-CH 16V 9.6A/51A IPAK, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 51A (Tc), Rds On (Max) @ Id, Vgs: 8.75mOhm @ 15A, 10V, Power Dissipation (Max): 1.2W (Ta), 34.9W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: IPAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 16 V, Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 963 pF @ 12 V.
Weitere Produktangebote NTD3813N-35G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
|
NTD3813N-35G | onsemi |
Description: MOSFET N-CH 16V 9.6A/51A IPAK Input Capacitance (Ciss) (Max) @ Vds: 963 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 16 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.2W (Ta), 34.9W (Tc) Rds On (Max) @ Id, Vgs: 8.75mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 51A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Stub Leads, IPak Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTD3813N-35G |
|
Hersteller: onsemi
Description: MOSFET N-CH 16V 9.6A/51A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 963 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 16 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta), 34.9W (Tc)
Rds On (Max) @ Id, Vgs: 8.75mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Description: MOSFET N-CH 16V 9.6A/51A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 963 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 16 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta), 34.9W (Tc)
Rds On (Max) @ Id, Vgs: 8.75mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH