NTD4806NA-1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 30V 11.3A/79A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 79A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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Technische Details NTD4806NA-1G onsemi
Description: MOSFET N-CH 30V 11.3A/79A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Supplier Device Package: IPAK, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 79A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.
Weitere Produktangebote NTD4806NA-1G
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NTD4806NA-1G | onsemi |
Description: MOSFET N-CH 30V 11.3A/79A IPAK Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 79A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTD4806NA-1G |
Hersteller: onsemi
Description: MOSFET N-CH 30V 11.3A/79A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 79A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 30V 11.3A/79A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 79A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH