NTD4806NAT4G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 30V 11.3A/79A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 12 V
Description: MOSFET N-CH 30V 11.3A/79A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 12 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details NTD4806NAT4G onsemi
Description: MOSFET N-CH 30V 11.3A/79A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 79A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DPAK, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 12 V.
Weitere Produktangebote NTD4806NAT4G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| NTD4806NAT4G | Hersteller : ON Semiconductor |
auf Bestellung 6 Stücke: Lieferzeit 21-28 Tag (e) |
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| NTD4806NAT4G | Hersteller : ONSEMI |
Description: ONSEMI - NTD4806NAT4G - NTD4806NAT4G - MOSFET N-CH 30V 11A DPAK tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTD4806NAT4G | Hersteller : ON Semiconductor |
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NTD4806NAT4G | Hersteller : onsemi |
Description: MOSFET N-CH 30V 11.3A/79A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 79A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 12 V |
Produkt ist nicht verfügbar |