NTD4854N-35G onsemi
Hersteller: onsemiDescription: MOSFET N-CH 25V 15.7A/128A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V
Power Dissipation (Max): 1.43W (Ta), 93.75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 49.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 12 V
auf Bestellung 4950 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 650+ | 0.76 EUR |
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Technische Details NTD4854N-35G onsemi
Description: MOSFET N-CH 25V 15.7A/128A IPAK, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 128A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V, Power Dissipation (Max): 1.43W (Ta), 93.75W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: IPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 49.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 12 V.
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NTD4854N-35G | Hersteller : onsemi |
Description: MOSFET N-CH 25V 15.7A/128A IPAK Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 128A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V Power Dissipation (Max): 1.43W (Ta), 93.75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 49.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 12 V |
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