NTD4858N-35G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 25V 11.2A/73A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 1563 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 10+ | 1.92 EUR |
| 75+ | 0.93 EUR |
| 150+ | 0.84 EUR |
| 525+ | 0.71 EUR |
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Technische Details NTD4858N-35G onsemi
Description: MOSFET N-CH 25V 11.2A/73A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 1563 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: IPAK, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc), Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Stub Leads, IPak, Packaging: Tube.
Weitere Produktangebote NTD4858N-35G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NTD4858N-35G | Hersteller : ON Semiconductor |
MOSFET NFET 25V 73A 0.0062R DPAK |
auf Bestellung 729 Stücke: Lieferzeit 10-14 Tag (e) |