NTD4858NT4G ON Semiconductor
auf Bestellung 100000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 161+ | 0.98 EUR |
| 178+ | 0.85 EUR |
| 232+ | 0.63 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.44 EUR |
| 2500+ | 0.42 EUR |
| 5000+ | 0.38 EUR |
| 12500+ | 0.34 EUR |
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Technische Details NTD4858NT4G ON Semiconductor
Description: MOSFET N-CH 25V 11.2A/73A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc), Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V, Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1563 pF @ 12 V.
Weitere Produktangebote NTD4858NT4G nach Preis ab 0.62 EUR bis 1.46 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NTD4858NT4G | Hersteller : onsemi |
 Description: MOSFET N-CH 25V 11.2A/73A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1563 pF @ 12 V |
auf Bestellung 1284 Stücke: Lieferzeit 10-14 Tag (e) |
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NTD4858NT4G | Hersteller : onsemi |
MOSFET NFET 25V 73A 0.0062R DPAK |
auf Bestellung 52 Stücke: Lieferzeit 14-28 Tag (e) |
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| NTD4858NT4G | Hersteller : ON |
0912+ TO-252 |
auf Bestellung 1335 Stücke: Lieferzeit 21-28 Tag (e) |
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| NTD4858NT4G | Hersteller : ONSEMI |
Description: ONSEMI - NTD4858NT4G - MOSFET, N CHANNEL, 25V, 14A, TO-252-3 tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 175670 Stücke: Lieferzeit 14-21 Tag (e) |
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NTD4858NT4G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 25V 14A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| NTD4858NT4G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 56A; Idm: 146A; 54.5W; DPAK Case: DPAK Drain-source voltage: 25V Drain current: 56A On-state resistance: 7.3mΩ Type of transistor: N-MOSFET Power dissipation: 54.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 12.8nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 146A Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NTD4858NT4G | Hersteller : onsemi |
Description: MOSFET N-CH 25V 11.2A/73A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1563 pF @ 12 V |
Produkt ist nicht verfügbar |
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| NTD4858NT4G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 56A; Idm: 146A; 54.5W; DPAK Case: DPAK Drain-source voltage: 25V Drain current: 56A On-state resistance: 7.3mΩ Type of transistor: N-MOSFET Power dissipation: 54.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 12.8nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 146A Mounting: SMD |
Produkt ist nicht verfügbar |