NTD4906NA-35G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 30V 10.3A/54A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: IPAK
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 15 V
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Technische Details NTD4906NA-35G onsemi
Description: MOSFET N-CH 30V 10.3A/54A IPAK, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: IPAK, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 15 V.
Weitere Produktangebote NTD4906NA-35G
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NTD4906NA-35G | onsemi |
Description: MOSFET N-CH 30V 10.3A/54A IPAK Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: IPAK Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTD4906NA-35G |
Hersteller: onsemi
Description: MOSFET N-CH 30V 10.3A/54A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: IPAK
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 15 V
Description: MOSFET N-CH 30V 10.3A/54A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: IPAK
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH