NTD4909NA-35G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 30V 8.8A/41A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Bulk
| Anzahl | Preis |
|---|---|
| 1101+ | 0.44 EUR |
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Technische Details NTD4909NA-35G onsemi
Description: MOSFET N-CH 30V 8.8A/41A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Supplier Device Package: IPAK, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 41A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Through Hole, Package / Case: TO-251-3 Stub Leads, IPak, Packaging: Bulk.
Weitere Produktangebote NTD4909NA-35G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NTD4909NA-35G | onsemi |
Description: MOSFET N-CH 30V 8.8A/41A IPAK Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 41A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-251-3 Stub Leads, IPak Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
NTD4909NA-35G | ON Semiconductor |
 MOSFET NFET DPAK 30V 41A 8 mOhm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTD4909NA-35G |
Hersteller: onsemi
Description: MOSFET N-CH 30V 8.8A/41A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Description: MOSFET N-CH 30V 8.8A/41A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTD4909NA-35G |
|
Hersteller: ON Semiconductor
MOSFET NFET DPAK 30V 41A 8 mOhm
MOSFET NFET DPAK 30V 41A 8 mOhm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH