NTD65N03R-1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 25V 9.5A/32A IPAK
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
| Anzahl | Preis |
|---|---|
| 2049+ | 0.24 EUR |
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Technische Details NTD65N03R-1G onsemi
Description: MOSFET N-CH 25V 9.5A/32A IPAK, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: IPAK, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.3W (Ta), 50W (Tc), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 32A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| NTD65N03R-1G | ON |
07+; |
auf Bestellung 2400 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTD65N03R-1G |
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Hersteller: ON
07+;
07+;
auf Bestellung 2400 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
