NTD85N02R-1G onsemi
Hersteller: onsemiDescription: MOSFET N-CH 24V 12A/85A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 1.25W (Ta), 78.1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 20 V
auf Bestellung 246305 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 841+ | 0.58 EUR |
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Technische Details NTD85N02R-1G onsemi
Description: MOSFET N-CH 24V 12A/85A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 85A (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V, Power Dissipation (Max): 1.25W (Ta), 78.1W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: IPAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 24 V, Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 20 V.
Weitere Produktangebote NTD85N02R-1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| NTD85N02R-1G | Hersteller : ONSEMI |
Description: ONSEMI - NTD85N02R-1G - NTD85N02R-1G, SINGLE MOSFETS tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 246305 Stücke: Lieferzeit 14-21 Tag (e) |
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NTD85N02R-1G | Hersteller : onsemi |
Description: MOSFET N-CH 24V 12A/85A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Power Dissipation (Max): 1.25W (Ta), 78.1W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 20 V |
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