Technische Details NTD85N02R ON
Description: MOSFET N-CH 24V 12A/85A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 85A (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V, Power Dissipation (Max): 1.25W (Ta), 78.1W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 24 V, Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 20 V.
Weitere Produktangebote NTD85N02R
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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NTD85N02R | Hersteller : ON | SOT-252 |
auf Bestellung 40000 Stücke: Lieferzeit 21-28 Tag (e) |
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NTD85N02R | Hersteller : ON | TO-252/D-PAK |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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NTD85N02R | Hersteller : onsemi |
Description: MOSFET N-CH 24V 12A/85A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Power Dissipation (Max): 1.25W (Ta), 78.1W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 20 V |
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