Technische Details NTD85N02R ON
Description: MOSFET N-CH 24V 12A/85A DPAK, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V, Drain to Source Voltage (Vdss): 24 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.25W (Ta), 78.1W (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 85A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).
Weitere Produktangebote NTD85N02R
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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NTD85N02R | onsemi |
Description: MOSFET N-CH 24V 12A/85A DPAKMounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V Drain to Source Voltage (Vdss): 24 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.25W (Ta), 78.1W (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 85A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
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| NTD85N02R |
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Hersteller: onsemi
Description: MOSFET N-CH 24V 12A/85A DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V
Drain to Source Voltage (Vdss): 24 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 78.1W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET N-CH 24V 12A/85A DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V
Drain to Source Voltage (Vdss): 24 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 78.1W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


