Technische Details NTD95N02R ON
Description: MOSFET N-CH 24V 12A/32A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V, Drain to Source Voltage (Vdss): 24 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.25W (Ta), 86W (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 32A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube.
Weitere Produktangebote NTD95N02R
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
NTD95N02R | onsemi |
Description: MOSFET N-CH 24V 12A/32A DPAKInput Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V Drain to Source Voltage (Vdss): 24 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.25W (Ta), 86W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 32A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
NTD95N02R | onsemi |
MOSFET 24V 95A N-Channel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTD95N02R |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 24V 12A/32A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Drain to Source Voltage (Vdss): 24 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 86W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Description: MOSFET N-CH 24V 12A/32A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Drain to Source Voltage (Vdss): 24 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 86W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTD95N02R |
![]() |
Hersteller: onsemi
MOSFET 24V 95A N-Channel
MOSFET 24V 95A N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



