| Anzahl | Preis |
|---|---|
| 1+ | 3.64 EUR |
| 10+ | 3.27 EUR |
| 100+ | 2.64 EUR |
| 500+ | 2.16 EUR |
| 1000+ | 1.8 EUR |
| 2500+ | 1.72 EUR |
| 5000+ | 1.69 EUR |
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Technische Details NTDS015N15MCT4G onsemi
Description: MOSFET N-CH 150V 11A/50A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 29A, 10V, Power Dissipation (Max): 3.8W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 162µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 75 V.
Weitere Produktangebote NTDS015N15MCT4G nach Preis ab 1.42 EUR bis 4.26 EUR
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NTDS015N15MCT4G | onsemi |
 Description: MOSFET N-CH 150V 11A/50A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 29A, 10V Power Dissipation (Max): 3.8W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 162µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 75 V |
auf Bestellung 1334 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTDS015N15MCT4G | ONN |
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auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTDS015N15MCT4G |
|
Hersteller: onsemi
Description: MOSFET N-CH 150V 11A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 29A, 10V
Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 162µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 75 V
Description: MOSFET N-CH 150V 11A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 29A, 10V
Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 162µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 75 V
auf Bestellung 1334 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 4.26 EUR |
| 10+ | 2.76 EUR |
| 100+ | 1.91 EUR |
| 500+ | 1.54 EUR |
| 1000+ | 1.42 EUR |
| NTDS015N15MCT4G |
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Hersteller: ONN
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH