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NTDS015N15MCT4G

NTDS015N15MCT4G onsemi

NTDS015N15MC_D-1888967.pdf Hersteller: onsemi
MOSFET PTNG 150V 15MOHM DPAK
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Lieferzeit 10-14 Tag (e)
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1+3.64 EUR
10+3.27 EUR
100+2.64 EUR
500+2.16 EUR
1000+1.8 EUR
2500+1.72 EUR
5000+1.69 EUR
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Technische Details NTDS015N15MCT4G onsemi

Description: MOSFET N-CH 150V 11A/50A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 29A, 10V, Power Dissipation (Max): 3.8W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 162µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 75 V.

Weitere Produktangebote NTDS015N15MCT4G nach Preis ab 1.43 EUR bis 4.29 EUR

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NTDS015N15MCT4G NTDS015N15MCT4G Hersteller : onsemi ntds015n15mc-d.pdf Description: MOSFET N-CH 150V 11A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 29A, 10V
Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 162µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 75 V
auf Bestellung 2334 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.29 EUR
10+2.78 EUR
100+1.92 EUR
500+1.55 EUR
1000+1.43 EUR
Mindestbestellmenge: 5
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NTDS015N15MCT4G NTDS015N15MCT4G Hersteller : ON Semiconductor ntds015n15mc-d.pdf Trans MOSFET N-CH 150V 11A 3-Pin(2+Tab) DPAK T/R
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NTDS015N15MCT4G NTDS015N15MCT4G Hersteller : onsemi ntds015n15mc-d.pdf Description: MOSFET N-CH 150V 11A/50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 29A, 10V
Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 162µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 75 V
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NTDS015N15MCT4G Hersteller : ONSEMI ntds015n15mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 11A; Idm: 246A; 3.8W; DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 27nC
On-state resistance: 12.6mΩ
Power dissipation: 3.8W
Drain current: 11A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Pulsed drain current: 246A
Case: DPAK
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