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NTE128P

NTE128P NTE Electronics, Inc

nte128p.pdf
Hersteller: NTE Electronics, Inc
Description: TRANS NPN 80V 1A TO237
Packaging: Bag
Package / Case: TO-237AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 350mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-237
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 850 mW
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Technische Details NTE128P NTE Electronics, Inc

Description: TRANS NPN 80V 1A TO237, Packaging: Bag, Package / Case: TO-237AA, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 350mA, 2V, Frequency - Transition: 50MHz, Supplier Device Package: TO-237, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 850 mW.