NTE159M NTE Electronics
Hersteller: NTE ElectronicsCategory: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.8W; TO18
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.8W
Case: TO18
Current gain: 50...300
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 71 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 43+ | 1.70 EUR |
| 47+ | 1.54 EUR |
| 53+ | 1.36 EUR |
| 56+ | 1.29 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTE159M NTE Electronics
Description: TRANS PNP 60V 0.6A TO18, Packaging: Bag, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Frequency - Transition: 200MHz, Supplier Device Package: TO-18, Part Status: Active, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1.8 W.
Weitere Produktangebote NTE159M nach Preis ab 1.29 EUR bis 2.11 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
NTE159M | Hersteller : NTE Electronics |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.8W; TO18 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 1.8W Case: TO18 Current gain: 50...300 Mounting: THT |
auf Bestellung 71 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
NTE159M | Hersteller : NTE Electronics, Inc |
Description: TRANS PNP 60V 0.6A TO18 Packaging: Bag Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-18 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.8 W |
auf Bestellung 302 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
NTE159M | Hersteller : NTE Electronics, Inc. |
Silicon Complementary RF Transistors General Purpose |
Produkt ist nicht verfügbar |