NTE2355 NTE Electronics, Inc
Hersteller: NTE Electronics, IncDescription: T-NPN SI W/10K RESISTOR
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 Short Body
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 713 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 1.57 EUR |
| 20+ | 1.49 EUR |
| 30+ | 1.41 EUR |
| 40+ | 1.33 EUR |
| 50+ | 1.3 EUR |
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Technische Details NTE2355 NTE Electronics, Inc
Description: T-NPN SI W/10K RESISTOR, Packaging: Bag, Package / Case: TO-226-3, TO-92-3 Short Body, Mounting Type: Through Hole, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V, Supplier Device Package: TO-92S, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 300 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms.
Weitere Produktangebote NTE2355
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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NTE2355 | Hersteller : NTE Electronics, Inc. |
Trans Digital BJT NPN 50V 200mA 3-Pin TO-92 |
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