NTE2984 NTE Electronics, Inc
Hersteller: NTE Electronics, Inc
Description: MOSFET-PWR N-CHAN 60V 17A TO-220
Packaging: Bag
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 8.5A, 5V
Power Dissipation (Max): 60W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 4+ | 4.84 EUR |
| 10+ | 4.59 EUR |
| 20+ | 4.36 EUR |
| 50+ | 4.12 EUR |
| 100+ | 4.01 EUR |
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Technische Details NTE2984 NTE Electronics, Inc
Description: MOSFET-PWR N-CHAN 60V 17A TO-220, Packaging: Bag, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 8.5A, 5V, Power Dissipation (Max): 60W, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V.
Weitere Produktangebote NTE2984 nach Preis ab 71.5 EUR bis 71.5 EUR
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NTE2984 | NTE Electronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 68A; 60W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 68A Power dissipation: 60W Case: TO220 Gate-source voltage: ±10V On-state resistance: 0.14Ω Mounting: THT Kind of channel: enhancement |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
|
| NTE2984 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 68A; 60W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 68A
Power dissipation: 60W
Case: TO220
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 68A; 60W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 68A
Power dissipation: 60W
Case: TO220
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: THT
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |

