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Technische Details NTE3300 NTE Electronics, Inc
Category: THT IGBT transistors, Description: Transistor: IGBT; 400V; 10A; 30W; TO220FP, Mounting: THT, Collector-emitter voltage: 400V, Power dissipation: 30W, Pulsed collector current: 130A, Type of transistor: IGBT, Turn-on time: 150ns, Case: TO220FP, Turn-off time: 4.5µs, Gate-emitter voltage: ±25V, Collector current: 10A.
Weitere Produktangebote NTE3300
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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NTE3300 | NTE Electronics |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 400V; 10A; 30W; TO220FP Mounting: THT Collector-emitter voltage: 400V Power dissipation: 30W Pulsed collector current: 130A Type of transistor: IGBT Turn-on time: 150ns Case: TO220FP Turn-off time: 4.5µs Gate-emitter voltage: ±25V Collector current: 10A |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTE3300 |
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Hersteller: NTE Electronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 400V; 10A; 30W; TO220FP
Mounting: THT
Collector-emitter voltage: 400V
Power dissipation: 30W
Pulsed collector current: 130A
Type of transistor: IGBT
Turn-on time: 150ns
Case: TO220FP
Turn-off time: 4.5µs
Gate-emitter voltage: ±25V
Collector current: 10A
Category: THT IGBT transistors
Description: Transistor: IGBT; 400V; 10A; 30W; TO220FP
Mounting: THT
Collector-emitter voltage: 400V
Power dissipation: 30W
Pulsed collector current: 130A
Type of transistor: IGBT
Turn-on time: 150ns
Case: TO220FP
Turn-off time: 4.5µs
Gate-emitter voltage: ±25V
Collector current: 10A
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)