
NTE541 NTE Electronics, Inc

Description: DIODE GEN PURP 12KV 1A
Packaging: Bag
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 120°C (Max)
Voltage - DC Reverse (Vr) (Max): 12000 V
Voltage - Forward (Vf) (Max) @ If: 18 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 12000 V
auf Bestellung 135 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 20.2 EUR |
10+ | 19.2 EUR |
20+ | 18.18 EUR |
50+ | 17.18 EUR |
100+ | 16.77 EUR |
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Technische Details NTE541 NTE Electronics, Inc
Description: DIODE GEN PURP 12KV 1A, Packaging: Bag, Package / Case: Module, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 1A, Operating Temperature - Junction: 120°C (Max), Voltage - DC Reverse (Vr) (Max): 12000 V, Voltage - Forward (Vf) (Max) @ If: 18 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 12000 V.