NTE5817HC NTE Electronics, Inc
Hersteller: NTE Electronics, Inc
Description: DIODE GEN PURP 1KV 10A AXIAL
Packaging: Bag
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: Axial
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
| Anzahl | Preis |
|---|---|
| 3+ | 6.69 EUR |
| 10+ | 6.35 EUR |
| 20+ | 6.02 EUR |
| 50+ | 5.68 EUR |
| 100+ | 5.54 EUR |
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Technische Details NTE5817HC NTE Electronics, Inc
Description: DIODE GEN PURP 1KV 10A AXIAL, Packaging: Bag, Package / Case: Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 150pF @ 4V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: Axial, Operating Temperature - Junction: -55°C ~ 125°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V.